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Course Description:
This course will cover the following topical areas:
Semiconductor Physics,
P-N Junctions, IC Resistors,
Bipolar Transistors,
Schottky Diodes, M-S Contacts,
Tunnel Junctions,
Heterostructures,
MOS Capacitors,
MOSFETS,
Advanced CMOS, nanodevices, MOSFETs, Silicon-On-Insulator (SOI), scaling and misc. devices. Invited speakers from industry will supplement the course by lecturing on some of the topics above. The course will conclude with mini-projects in a semiconductor device related topic to be chosen by the student.
Faculty/Manager:
Robert Laibowitz
Contact Information:
Robert Laibowitz
email: laibow@ee.columbia.eduCredits for Course: 3 Viewing Schedule: 2 lectures per week Prerequisites: An introductory course in solid state physics or devices/materials is generally required but basic concepts will also be covered when needed. Applicable Degree Program: Most courses 4000-level and above can be credited to all degree programs. All courses are subject to advisor approval. Required Text(s): Device Electronics for Integrated Circuits , Richard S. Muller and Theodore I. Kamins with Mansun Chan, John Wiley and Sons, 2003, Third Edition, ISBN# 0-471-59398-2 Homework: 8 problem sets generally due weekly (in the first 10 weeks) Project: Mini-Project - topics related to semiconductor devices Midterm Exam: 75 minutes. Closed book but students are allowed to bring a single sheet of formulas and a scientific calculator. Final Exam: 3 hours. Similar policy as above for the mid term except 2 sheet of formulas allowed. Grading: HW 25%, Project 15%, Midterm 25%, Final 35% Notes: Tentative Schedule:
First 3- 4 weeks
Introduction / Semiconductor Physics (Chapter 1)
Semiconductor Physics II (Chapters 1, 5.1-5.2)
P-N Junctions, IC Resistors (Chapters 2.10, 3.1-3.2, 4, 5)
Next 3 to 4 weeks (including Spring Break)
Bipolar Transistors (6, 7)
Midterm
Schottky Diodes (Chapter 3)
Metal Semiconductor Contacts (Chapter 3)
Tunnel Junctions
Misc. Devices incl. nanodevices
Last 4 to 5 weeks
MOS Capacitors (Chapter 8)
Outside speaker on heterostructures
MOSFETS, scaling, tunneling, nanostructures (Chapter 8, 9)
Outside speaker on Advanced CMOS
Mini Project Presentations
Final
* The information contained in this syllabus is subject to change at any time.